All MOSFET. PJS6806 Datasheet

 

PJS6806 Datasheet and Replacement


   Type Designator: PJS6806
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048 Ohm
   Package: SOT-23-6L
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PJS6806 Datasheet (PDF)

 ..1. Size:304K  panjit
 pjs6806.pdf pdf_icon

PJS6806

PPJS6806 30V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 30 V 4A Voltage Current Features RDS(ON) , VGS@10V, ID@4.0A

 8.1. Size:300K  panjit
 pjs6801.pdf pdf_icon

PJS6806

PPJS6801 30V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -30 V Current -3.2A Features RDS(ON) , VGS@-10V, ID@-3.2A

 8.2. Size:159K  panjit
 pjs6809.pdf pdf_icon

PJS6806

PPJS6809 30V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -30 V Current -2.6A Features RDS(ON) , VGS@-10V, ID@-2.6A

 8.3. Size:269K  panjit
 pjs6800.pdf pdf_icon

PJS6806

PPJS6800 30V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm Voltage 30 V Current 3.9A Features RDS(ON) , VGS@10V, ID@3.9A

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History: SQ9407EY-T1 | ALD1103DB | CHM85A3PAGP | TK7P65W | SFFX054Z

Keywords - PJS6806 MOSFET datasheet

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