All MOSFET. PJS6811 Datasheet

 

PJS6811 Datasheet and Replacement


   Type Designator: PJS6811
   Marking Code: S11
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 2.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.4 nC
   trⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 43 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105 Ohm
   Package: SOT-23-6L
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PJS6811 Datasheet (PDF)

 ..1. Size:272K  panjit
 pjs6811.pdf pdf_icon

PJS6811

PPJS6811 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) Voltage -20 V Current -2.7A Features RDS(ON) , VGS@-4.5V, ID@-2.7A

 8.1. Size:152K  panjit
 pjs6815.pdf pdf_icon

PJS6811

PPJS6815 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit: inch(mm)Voltage -20 V Current -3.6A Features RDS(ON) , VGS@-4.5V, ID@-3.6A

 8.2. Size:284K  panjit
 pjs6812.pdf pdf_icon

PJS6811

PPJS6812 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) 20 V 3.7A Voltage Current Features RDS(ON) , VGS@4.5V, ID@3.7A

 8.3. Size:254K  panjit
 pjs6816.pdf pdf_icon

PJS6811

PPJS6816 20V N-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit: inch(mm) 20 V 5.2A Voltage Current Features RDS(ON) , VGS@4.5V, ID@5.2A

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