All MOSFET. PJT7800 Datasheet

 

PJT7800 Datasheet and Replacement


   Type Designator: PJT7800
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 25.8 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: SOT-363
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PJT7800 Datasheet (PDF)

 ..1. Size:235K  panjit
 pjt7800.pdf pdf_icon

PJT7800

PPJT7800 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A

 8.1. Size:242K  panjit
 pjt7801.pdf pdf_icon

PJT7800

PPJT7801 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)Voltage -20 V Current -0.7A Features RDS(ON) , VGS@-4.5V, ID@-0.7A

 8.2. Size:192K  panjit
 pjt7802.pdf pdf_icon

PJT7800

PPJT7802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 V 0.5A Voltage Current Features RDS(ON) , VGS@4.5V, ID@0.5A

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SWP050R95E8S | AUIRF7675M2 | APM4012NU | HGB039N08S | NCEP058N85D | IXTV110N25TS

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