All MOSFET. PJT7801 Datasheet

 

PJT7801 Datasheet and Replacement


   Type Designator: PJT7801
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
   Package: SOT-363
 

 PJT7801 substitution

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PJT7801 Datasheet (PDF)

 ..1. Size:242K  panjit
 pjt7801.pdf pdf_icon

PJT7801

PPJT7801 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)Voltage -20 V Current -0.7A Features RDS(ON) , VGS@-4.5V, ID@-0.7A

 8.1. Size:192K  panjit
 pjt7802.pdf pdf_icon

PJT7801

PPJT7802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 V 0.5A Voltage Current Features RDS(ON) , VGS@4.5V, ID@0.5A

 8.2. Size:235K  panjit
 pjt7800.pdf pdf_icon

PJT7801

PPJT7800 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit: inch(mm)20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A

Datasheet: PJS6815 , PJS6816 , PJS6832 , PJS6833 , PJT138K , PJT7408 , PJT7600 , PJT7800 , AON6380 , PJT7802 , PJW1NA50 , PJW1NA60 , PJW1NA60A , PJW1NA80 , PJX138K , PJX8802 , PJX8803 .

History: FXN30S55F | AOD504 | IPSA70R600P7S | BUZ84 | INK0001AM1 | 2SK3541MGP | SWD5N65K

Keywords - PJT7801 MOSFET datasheet

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