PJT7801 Specs and Replacement

Type Designator: PJT7801

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 37 nS

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm

Package: SOT-363

PJT7801 substitution

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PJT7801 datasheet

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 pjt7801.pdf pdf_icon

PJT7801

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 pjt7802.pdf pdf_icon

PJT7801

PPJT7802 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) 20 V 0.5A Voltage Current Features RDS(ON) , VGS@4.5V, ID@0.5A... See More ⇒

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PJT7801

PPJT7800 20V N-Channel Enhancement Mode MOSFET ESD Protected SOT-363 Unit inch(mm) 20 V 1A Voltage Current Features RDS(ON) , VGS@4.5V, ID@1.0A... See More ⇒

Detailed specifications: PJS6815, PJS6816, PJS6832, PJS6833, PJT138K, PJT7408, PJT7600, PJT7800, IRFZ24N, PJT7802, PJW1NA50, PJW1NA60, PJW1NA60A, PJW1NA80, PJX138K, PJX8802, PJX8803

Keywords - PJT7801 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs