All MOSFET. PMCM4401VNE Datasheet

 

PMCM4401VNE Datasheet and Replacement


   Type Designator: PMCM4401VNE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35.5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
   Package: WLCSP4
 

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PMCM4401VNE Datasheet (PDF)

 ..1. Size:318K  nxp
pmcm4401vne.pdf pdf_icon

PMCM4401VNE

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 5.1. Size:317K  nxp
pmcm4401vpe.pdf pdf_icon

PMCM4401VNE

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

 6.1. Size:263K  nxp
pmcm4401une.pdf pdf_icon

PMCM4401VNE

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 6.2. Size:715K  nxp
pmcm4401upe.pdf pdf_icon

PMCM4401VNE

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

Datasheet: PJZ6NA90 , PJZ9NA90 , PMBFJ174 , PMBFJ175 , PMBFJ176 , PMBFJ177 , PMBFJ620 , PMC85XP , 2N7002 , PMCM4401VPE , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 , WFF5N60 .

History: IRFSL3107PBF | AON6206

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