PMCM4401VPE Specs and Replacement

Type Designator: PMCM4401VPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.7 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: WLCSP4

PMCM4401VPE substitution

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PMCM4401VPE datasheet

 ..1. Size:317K  nxp
pmcm4401vpe.pdf pdf_icon

PMCM4401VPE

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis... See More ⇒

 5.1. Size:318K  nxp
pmcm4401vne.pdf pdf_icon

PMCM4401VPE

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc... See More ⇒

 6.1. Size:263K  nxp
pmcm4401une.pdf pdf_icon

PMCM4401VPE

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha... See More ⇒

 6.2. Size:715K  nxp
pmcm4401upe.pdf pdf_icon

PMCM4401VPE

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D... See More ⇒

Detailed specifications: PJZ9NA90, PMBFJ174, PMBFJ175, PMBFJ176, PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, AOD4184A, PMCM440VNE, PMCM6501VPE, PMCM650VNE, WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B

Keywords - PMCM4401VPE MOSFET specs

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