All MOSFET. PMCM4401VPE Datasheet

 

PMCM4401VPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMCM4401VPE
   Marking Code: Q
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 3.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.8 nC
   trⓘ - Rise Time: 24.7 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
   Package: WLCSP4

 PMCM4401VPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMCM4401VPE Datasheet (PDF)

 ..1. Size:317K  nxp
 pmcm4401vpe.pdf

PMCM4401VPE PMCM4401VPE

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

 5.1. Size:318K  nxp
 pmcm4401vne.pdf

PMCM4401VPE PMCM4401VPE

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 6.1. Size:263K  nxp
 pmcm4401une.pdf

PMCM4401VPE PMCM4401VPE

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 6.2. Size:715K  nxp
 pmcm4401upe.pdf

PMCM4401VPE PMCM4401VPE

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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