PMCM4401VPE - Даташиты. Аналоги. Основные параметры
Наименование производителя: PMCM4401VPE
Тип транзистора: MOSFET
Полярность: P
Pd ⓘ - Максимальная рассеиваемая мощность: 0.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.9 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 24.7 ns
Cossⓘ - Выходная емкость: 195 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
Тип корпуса: WLCSP4
Аналог (замена) для PMCM4401VPE
PMCM4401VPE Datasheet (PDF)
pmcm4401vpe.pdf

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis
pmcm4401vne.pdf

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc
pmcm4401une.pdf

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha
pmcm4401upe.pdf

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D
Другие MOSFET... PJZ9NA90 , PMBFJ174 , PMBFJ175 , PMBFJ176 , PMBFJ177 , PMBFJ620 , PMC85XP , PMCM4401VNE , AO4468 , PMCM440VNE , PMCM6501VPE , PMCM650VNE , WFF2N65 , WFF2N65B , WFF4N60 , WFF5N60 , WFF5N60B .
History: SPD15P10PG | NCEP050N10M | NCEP053N85GU | FQD24N08TF | NCEP055N10 | HUF75829D3ST | NCEP050N10MD
History: SPD15P10PG | NCEP050N10M | NCEP053N85GU | FQD24N08TF | NCEP055N10 | HUF75829D3ST | NCEP050N10MD



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