PMCM6501VPE MOSFET. Datasheet pdf. Equivalent
Type Designator: PMCM6501VPE
Marking Code: AD
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.556 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
|Id|ⓘ - Maximum Drain Current: 6.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19.6 nC
trⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: WLCSP6
PMCM6501VPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMCM6501VPE Datasheet (PDF)
pmcm6501vpe.pdf
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