WFF2N65 Specs and Replacement

Type Designator: WFF2N65

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 23 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-220F

WFF2N65 substitution

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WFF2N65 datasheet

 ..1. Size:785K  winsemi
 wff2n65.pdf pdf_icon

WFF2N65

WFF2N65 WFF2N65 WFF2N65 WFF2N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,650V(Type),R (Max 5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) Halog... See More ⇒

 0.1. Size:214K  winsemi
 wff2n65l.pdf pdf_icon

WFF2N65

WFF2N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 2.0A,650V,R (Max5.0 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced... See More ⇒

 0.2. Size:537K  winsemi
 wff2n65b.pdf pdf_icon

WFF2N65

WFF2N65B WFF2N65B WFF2N65B WFF2N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,650V(Type),R (Max 5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) Gener... See More ⇒

 8.1. Size:613K  winsemi
 wff2n60b.pdf pdf_icon

WFF2N65

WFF2N60B WFF2N60B WFF2N60B WFF2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒

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Detailed specifications: PMBFJ177, PMBFJ620, PMC85XP, PMCM4401VNE, PMCM4401VPE, PMCM440VNE, PMCM6501VPE, PMCM650VNE, AO4468, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, WFF630

Keywords - WFF2N65 MOSFET specs

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