All MOSFET. WFF5N60B Datasheet

 

WFF5N60B Datasheet and Replacement


   Type Designator: WFF5N60B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO-220F
      - MOSFET Cross-Reference Search

 

WFF5N60B Datasheet (PDF)

 ..1. Size:522K  winsemi
 wff5n60b.pdf pdf_icon

WFF5N60B

WFF5N60BWFF5N60BWFF5N60BWFF5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 7.1. Size:521K  winsemi
 wff5n60c.pdf pdf_icon

WFF5N60B

WFF5N60CWFF5N60CWFF5N60CWFF5N60CSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced

 7.2. Size:519K  winsemi
 wff5n60.pdf pdf_icon

WFF5N60B

WFF5N60WFF5N60WFF5N60WFF5N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 4.5A,600V,RDS(on)(Max 2.2)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral

 8.1. Size:215K  winsemi
 wff5n65l.pdf pdf_icon

WFF5N60B

WFF5N65L Product DescriptionSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesD5A,650V,R (Max2.7)@V =10V DS(on) GS Ultra-low Gate charge(Typical 12nC) Fast Switching CapabilityG 100%Avalanche Tested Maximum Junction Temperature Range(150)SGeneral DescriptionThis Power MOSFET is produced us

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History: BRD840 | DH100P25D | APTC80AM75SCG | 2SK1642 | IRF720 | IRLZ44ZL | SVF7N80T

Keywords - WFF5N60B MOSFET datasheet

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