WFF630 Specs and Replacement

Type Designator: WFF630

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO-220F

WFF630 substitution

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WFF630 datasheet

 ..1. Size:681K  winsemi
 wff630.pdf pdf_icon

WFF630

WFF630 WFF630 WFF630 WFF630 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 9A, 200V, R (Max 0.4 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 22nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General... See More ⇒

 9.1. Size:676K  winsemi
 wff634.pdf pdf_icon

WFF630

WFF634 WFF634 WFF634 WFF634 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 9A, 250V, R (Max 0.45 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 41nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description Genera... See More ⇒

Detailed specifications: WFF2N65, WFF2N65B, WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, IRF540, WFF634, WFF640, WFF730, WFF740, WFF7N60, WFF7N65S, WFF830, WFF840

Keywords - WFF630 MOSFET specs

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