WFF640 Specs and Replacement
Type Designator: WFF640
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 54 nS
Cossⓘ - Output Capacitance: 245 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO-220F
WFF640 substitution
- MOSFET ⓘ Cross-Reference Search
WFF640 datasheet
wff640.pdf
WFF640 WFF640 WFF640 WFF640 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,200V.RDS(on)(Max 0.1 8 )@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150 ) General Description... See More ⇒
Detailed specifications: WFF4N60, WFF5N60, WFF5N60B, WFF5N60C, WFF5N65B, WFF5N80, WFF630, WFF634, IRFP460, WFF730, WFF740, WFF7N60, WFF7N65S, WFF830, WFF840, WFF840B, WFF8N60
Keywords - WFF640 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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