All MOSFET. WFF640 Datasheet

 

WFF640 Datasheet and Replacement


   Type Designator: WFF640
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 54 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO-220F
 

 WFF640 substitution

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WFF640 Datasheet (PDF)

 ..1. Size:452K  winsemi
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WFF640

WFF640WFF640WFF640WFF640Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,200V.RDS(on)(Max 0.1 8)@VGS=10V Ultra-low Gate Charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(150)General Description

Datasheet: WFF4N60 , WFF5N60 , WFF5N60B , WFF5N60C , WFF5N65B , WFF5N80 , WFF630 , WFF634 , IRF640 , WFF730 , WFF740 , WFF7N60 , WFF7N65S , WFF830 , WFF840 , WFF840B , WFF8N60 .

History: LSD60R650HT | FDS7066N7 | AON6234 | CEP6186 | 2SK2159 | HGB080N10A | IPD096N08N3G

Keywords - WFF640 MOSFET datasheet

 WFF640 cross reference
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