All MOSFET. WFF840 Datasheet

 

WFF840 Datasheet and Replacement


   Type Designator: WFF840
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 44 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220F
 

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WFF840 Datasheet (PDF)

 ..1. Size:460K  winsemi
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WFF840

WFF840WFF840WFF840WFF840Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 8A,500V,RDS(on)(Max 0.8)@VGS=10V Ultra-low Gate Charge(Typical 48nC)Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(15

 0.1. Size:403K  winsemi
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WFF840

WFF840BWFF840BWFF840BWFF840BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.75)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi

Datasheet: WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , WFF7N60 , WFF7N65S , WFF830 , IRF630 , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , WFJ8N65B .

History: 2SK1547-01MR | DMP6110SSD | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | HUFA75829D3S

Keywords - WFF840 MOSFET datasheet

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