WFF840 Datasheet and Replacement
Type Designator: WFF840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 145 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
Package: TO-220F
WFF840 substitution
WFF840 Datasheet (PDF)
wff840.pdf

WFF840WFF840WFF840WFF840Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 8A,500V,RDS(on)(Max 0.8)@VGS=10V Ultra-low Gate Charge(Typical 48nC)Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(15
wff840b.pdf

WFF840BWFF840BWFF840BWFF840BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,500V, R (Max0.75)@V =10VDS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi
Datasheet: WFF630 , WFF634 , WFF640 , WFF730 , WFF740 , WFF7N60 , WFF7N65S , WFF830 , IRFP260N , WFF840B , WFF8N60 , WFF8N60B , WFF8N65B , WFF9N50 , WFF9N90 , WFJ5N65B , WFJ8N65B .
History: 3SK232 | WFW9N90 | VBZM40N10 | 6N70KG-TND-R | SPB16N50C3 | 3SK249 | WFW20N60W
Keywords - WFF840 MOSFET datasheet
WFF840 cross reference
WFF840 equivalent finder
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WFF840 substitution
WFF840 replacement
History: 3SK232 | WFW9N90 | VBZM40N10 | 6N70KG-TND-R | SPB16N50C3 | 3SK249 | WFW20N60W



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