WFF840 Specs and Replacement

Type Designator: WFF840

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 44 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220F

WFF840 substitution

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WFF840 datasheet

 ..1. Size:460K  winsemi
wff840.pdf pdf_icon

WFF840

WFF840 WFF840 WFF840 WFF840 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 8A,500V,RDS(on)(Max 0.8 )@VGS=10V Ultra-low Gate Charge(Typical 48nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage ( VISO = 4000V AC ) Maximum Junction Temperature Range(15... See More ⇒

 0.1. Size:403K  winsemi
wff840b.pdf pdf_icon

WFF840

WFF840B WFF840B WFF840B WFF840B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,500V, R (Max0.75 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 28nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usi... See More ⇒

Detailed specifications: WFF630, WFF634, WFF640, WFF730, WFF740, WFF7N60, WFF7N65S, WFF830, IRF640N, WFF840B, WFF8N60, WFF8N60B, WFF8N65B, WFF9N50, WFF9N90, WFJ5N65B, WFJ8N65B

Keywords - WFF840 MOSFET specs

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