All MOSFET. WFN1N60 Datasheet

 

WFN1N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFN1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.1 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO-92

 WFN1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFN1N60 Datasheet (PDF)

 ..1. Size:396K  winsemi
 wfn1n60.pdf

WFN1N60 WFN1N60

WFN1N60WFN1N60WFN1N60WFN1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V, R (Max8.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionTh is Power MO SFET is produced

 0.1. Size:668K  winsemi
 wfn1n60n.pdf

WFN1N60 WFN1N60

WFN1N60NWFN1N60NWFN1N60NWFN1N60NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures0.5A,600V,RDS(on)(Max15.0)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usin

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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