All MOSFET. WFP2N60 Datasheet

 

WFP2N60 Datasheet and Replacement


   Type Designator: WFP2N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 35 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-220
 

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WFP2N60 Datasheet (PDF)

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WFP2N60

WFP2N60WFP2N60WFP2N60WFP2N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V, RDS(on)(Max 5)@VGS=10V Ultra-low Gate Charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced using Wins

 0.1. Size:549K  winsemi
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WFP2N60

WFP2N60BWFP2N60BWFP2N60BWFP2N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 2A,600V, R (Max 5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

Datasheet: WFP10N60 , WFP10N65 , WFP12N60 , WFP12N65 , WFP12N65S , WFP13N50 , WFP18N20 , WFP18N50 , IRF1010E , WFP2N60B , WFP3205 , WFP3205T , WFP4N60 , WFP50N06 , WFP50N06C , WFP5N50 , WFP5N60 .

History: J309 | SPP03N60C3 | APT12067JFLL | CJQ4406 | TSM2312CX | 2N7002NXBK | APT80F60J

Keywords - WFP2N60 MOSFET datasheet

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