All MOSFET. WFP630 Datasheet

 

WFP630 Datasheet and Replacement


   Type Designator: WFP630
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 72 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 85 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO-220
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WFP630 Datasheet (PDF)

 ..1. Size:530K  winsemi
 wfp630.pdf pdf_icon

WFP630

WFP630WFP630WFP630WFP630Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeaturesFeaturesFeaturesFeatures 9A, 200V, R (Max 0.4)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 22nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionGeneral

 9.1. Size:758K  winsemi
 wfp634.pdf pdf_icon

WFP630

WFP634WFP634WFP634WFP634Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A, 250V, R (Max 0.45)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 41nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionT h i s P o w e r M O S F E T is p r

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SVG085R9NT | SUP25P10-138 | IXTH160N075T | FDMB3800N | BUK9M120-100E | WM10N02M | 2SJ113

Keywords - WFP630 MOSFET datasheet

 WFP630 cross reference
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