All MOSFET. WFP70N06 Datasheet

 

WFP70N06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFP70N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 158 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 70 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 690 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: TO-220

 WFP70N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFP70N06 Datasheet (PDF)

 ..1. Size:508K  winsemi
 wfp70n06.pdf

WFP70N06 WFP70N06

WFP70N06WFP70N06WFP70N06WFP70N06Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 70A,60V, RDS(on)(Max0.014)@VGS=10V Ultra-low Gate charge(Typical 70nC) Low Crss (Typical 160pF) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThi

 0.1. Size:603K  winsemi
 wfp70n06t.pdf

WFP70N06 WFP70N06

WFP70N06TWFP70N06TWFP70N06TWFP70N06TSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 68A,60V, R (Max18m)@V =10VDS(on) GS Ultra-low Gate charge(Typical 20nC) Improved dv/dt capability 100%Avalanche Tested Maximum Junction Temperature Range(175)General DescriptionThis Power MOSFET is produ

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top