WFP830B Specs and Replacement

Type Designator: WFP830B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.6 Ohm

Package: TO-220

WFP830B substitution

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WFP830B datasheet

 ..1. Size:472K  winsemi
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WFP830B

WFP830B WFP830B WFP830B WFP830B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 5A,500V, R (Max1.6 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 18nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced usin... See More ⇒

 8.1. Size:495K  winsemi
 wfp830.pdf pdf_icon

WFP830B

WFP830 WFP830 WFP830 WFP830 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features Features Features Features 4.5A,500V,RDS(on)(Max 1.5 )@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description General Desc... See More ⇒

Detailed specifications: WFP640, WFP650, WFP70N06, WFP70N06T, WFP730, WFP740, WFP7N60, WFP830, STP80NF70, WFP840, WFP840B, WFP8N60, WFP8N60B, WFP9N20, WFU1N60, WFU1N60N, WFU20N06

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