All MOSFET. WFU1N60 Datasheet

 

WFU1N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFU1N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1.3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.1 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
   Package: TO-251

 WFU1N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFU1N60 Datasheet (PDF)

 ..1. Size:511K  winsemi
 wfu1n60.pdf

WFU1N60 WFU1N60

WFU1N60WFU1N60WFU1N60WFU1N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 1.3A,600V,R (Max 8.5)@V =10VDS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced u

 0.1. Size:582K  winsemi
 wfu1n60n.pdf

WFU1N60 WFU1N60

WFU1N60NSilicon N-Channel MOSFET Features 1A,600V, RDS(on)(Max 15.0)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description Th is Pow er MO S FET is pro du c ed usi ng Win se m i s ad va n ced planar stripe, VDMOS technology. This latest technology has

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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