WFU1N60 Specs and Replacement

Type Designator: WFU1N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm

Package: TO-251

WFU1N60 substitution

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WFU1N60 datasheet

 ..1. Size:511K  winsemi
 wfu1n60.pdf pdf_icon

WFU1N60

WFU1N60 WFU1N60 WFU1N60 WFU1N60 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 1.3A,600V,R (Max 8.5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒

 0.1. Size:582K  winsemi
 wfu1n60n.pdf pdf_icon

WFU1N60

WFU1N60N Silicon N-Channel MOSFET Features 1A,600V, RDS(on)(Max 15.0 )@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description Th is Pow er MO S FET is pro du c ed usi ng Win se m i s ad va n ced planar stripe, VDMOS technology. This latest technology has... See More ⇒

Detailed specifications: WFP7N60, WFP830, WFP830B, WFP840, WFP840B, WFP8N60, WFP8N60B, WFP9N20, IRFP250, WFU1N60N, WFU20N06, WFU2N60, WFU2N60B, WFU4N60, WFU5N50, WFU5N60, WFU5N60B

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.