All MOSFET. WFU20N06 Datasheet

 

WFU20N06 Datasheet and Replacement


   Type Designator: WFU20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-251
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WFU20N06 Datasheet (PDF)

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WFU20N06

WFU20N06 Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed to

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK2735 | SVGP20110NSTR | IPG20N06S2L-35 | MXP4004AT | MTB110P10E3 | 2SK2689-01MR | MEE42942-G

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