WFU20N06 Specs and Replacement

Type Designator: WFU20N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 68 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO-251

WFU20N06 substitution

- MOSFET ⓘ Cross-Reference Search

 

WFU20N06 datasheet

 ..1. Size:270K  winsemi
 wfu20n06.pdf pdf_icon

WFU20N06

WFU20N06 Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m )@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed to... See More ⇒

Detailed specifications: WFP830B, WFP840, WFP840B, WFP8N60, WFP8N60B, WFP9N20, WFU1N60, WFU1N60N, 2SK3568, WFU2N60, WFU2N60B, WFU4N60, WFU5N50, WFU5N60, WFU5N60B, WFU730, WFU830

Keywords - WFU20N06 MOSFET specs

 WFU20N06 cross reference

 WFU20N06 equivalent finder

 WFU20N06 pdf lookup

 WFU20N06 substitution

 WFU20N06 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility