All MOSFET. WFU20N06 Datasheet

 

WFU20N06 Datasheet and Replacement


   Type Designator: WFU20N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 68 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO-251
 

 WFU20N06 substitution

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WFU20N06 Datasheet (PDF)

 ..1. Size:270K  winsemi
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WFU20N06

WFU20N06 Silicon N-Channel MOSFET Features 20A,60V, RDS(on)(Max 39m)@VGS=10V Ultra-low Gate Charge(Typical 6.1nC) High Current Capability 100%Avalanche Tested Maximum Junction Temperature Range(150) General Description This Power MO S FET is produced using Win se m i s advanced planar stripe, This latest technology has been especially designed to

Datasheet: WFP830B , WFP840 , WFP840B , WFP8N60 , WFP8N60B , WFP9N20 , WFU1N60 , WFU1N60N , AO3401 , WFU2N60 , WFU2N60B , WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , WFU830 .

History: UF830KG-TF3-T | HM60N03D | NP16N04YUG | RJK0852DPB | CEF840L | SVGP02R58NL5 | JCS4N70MF

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