WFU5N50
MOSFET. Datasheet pdf. Equivalent
Type Designator: WFU5N50
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 61
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5
V
|Id|ⓘ - Maximum Drain Current: 5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 32
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 76
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.6
Ohm
Package:
TO-251
WFU5N50
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WFU5N50
Datasheet (PDF)
..1. Size:727K winsemi
wfu5n50.pdf
WFU5N50WFU5N50WFU5N50WFU5N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 5A,500V,RDS(on)(Max1.6)@VGS=10V Ultra-low Gate Charge(Typical 32nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MO SFET is pro du ced using Wi
9.1. Size:490K winsemi
wfu5n60.pdf
WFU5N60WFU5N60WFU5N60WFU5N60Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical 16nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced usi
9.2. Size:490K winsemi
wfu5n60b.pdf
WFU5N60BWFU5N60BWFU5N60BWFU5N60BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,600V,R (Max2.4)@V =10VDS(on) GS Ultra-low Gate charge(Typical 15nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produced
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