WFW18N50 Specs and Replacement
Type Designator: WFW18N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-3P
WFW18N50 substitution
- MOSFET ⓘ Cross-Reference Search
WFW18N50 datasheet
wfw18n50.pdf
WFW18N50 WFW18N50 WFW18N50 WFW18N50 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description These N-Channel enhancement... See More ⇒
wfw18n50n.pdf
WFW18N50N WFW18N50N WFW18N50N WFW18N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod... See More ⇒
wfw18n50w.pdf
WFW18N50W WFW18N50W WFW18N50W WFW18N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 18A,500V,R (Max0.27 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is prod... See More ⇒
Detailed specifications: WFU4N60, WFU5N50, WFU5N60, WFU5N60B, WFU730, WFU830, WFW064N, WFW13N50, IRFZ24N, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W, WFW40N25W, WFW9N90, WFW9N90W
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