WFW18N50 Datasheet and Replacement
Type Designator: WFW18N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 300 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.27 Ohm
Package: TO-3P
WFW18N50 substitution
WFW18N50 Datasheet (PDF)
wfw18n50.pdf

WFW18N50WFW18N50WFW18N50WFW18N50Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability100%Avalanche TestedMaximum Junction Temperature Range(150)General DescriptionThese N-Channel enhancement
wfw18n50n.pdf

WFW18N50NWFW18N50NWFW18N50NWFW18N50NSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is prod
wfw18n50w.pdf

WFW18N50WWFW18N50WWFW18N50WWFW18N50WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 18A,500V,R (Max0.27)@V =10VDS(on) GS Ultra-low Gate charge(Typical 42nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is prod
Datasheet: WFU4N60 , WFU5N50 , WFU5N60 , WFU5N60B , WFU730 , WFU830 , WFW064N , WFW13N50 , AON6380 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W .
History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F
Keywords - WFW18N50 MOSFET datasheet
WFW18N50 cross reference
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History: SI1013X | IRFSL3107PBF | AON6206 | HMS21N60F



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