WFW20N60W Specs and Replacement
Type Designator: WFW20N60W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
Package: TO-247
WFW20N60W substitution
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WFW20N60W datasheet
wfw20n60w.pdf
WFW20N60W WFW20N60W WFW20N60W WFW20N60W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 20A,600V,R (Max0.39 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is pro... See More ⇒
Detailed specifications: WFU5N60B, WFU730, WFU830, WFW064N, WFW13N50, WFW18N50, WFW18N50N, WFW18N50W, P60NF06, WFW24N50N, WFW24N50W, WFW40N25W, WFW9N90, WFW9N90W, WFY3N02, WFY3P02, WFY4101
Keywords - WFW20N60W MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: JCS740RC | PMPB100XPEA
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