All MOSFET. WFW20N60W Datasheet

 

WFW20N60W Datasheet and Replacement


   Type Designator: WFW20N60W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.39 Ohm
   Package: TO-247
 

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WFW20N60W Datasheet (PDF)

 ..1. Size:279K  winsemi
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WFW20N60W

WFW20N60WWFW20N60WWFW20N60WWFW20N60WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 20A,600V,R (Max0.39)@V =10VDS(on) GS Ultra-low Gate charge(Typical 150nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is pro

Datasheet: WFU5N60B , WFU730 , WFU830 , WFW064N , WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , AO3401 , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 .

History: IXTH500N04T2 | IXTN170P10P | AP4412GM | PSMN4R3-30BL | SFF20N60N | MTB600N03N3 | VBM1203M

Keywords - WFW20N60W MOSFET datasheet

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