WFW24N50W Specs and Replacement
Type Designator: WFW24N50W
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 290 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V
Qg ⓘ - Total Gate Charge: 90 nC
tr ⓘ - Rise Time: 250 nS
Cossⓘ - Output Capacitance: 520 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO-247
WFW24N50W substitution
- MOSFET ⓘ Cross-Reference Search
WFW24N50W datasheet
wfw24n50w.pdf
WFW24N50W WFW24N50W WFW24N50W WFW24N50W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 24A,500V,RDS(on)(Max0.19 )@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mod... See More ⇒
wfw24n50n.pdf
WFW24N50N WFW24N50N WFW24N50N WFW24N50N Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 24A,500V,RDS(on)(Max0.19 )@VGS=10V Ultra-low Gate charge(Typical 90nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mod... See More ⇒
Detailed specifications: WFU830, WFW064N, WFW13N50, WFW18N50, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, AO3400A, WFW40N25W, WFW9N90, WFW9N90W, WFY3N02, WFY3P02, WFY4101, WFY5N03, WFY5P03
Keywords - WFW24N50W MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: HFW8N65U
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