WFW9N90 Specs and Replacement

Type Designator: WFW9N90

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 5 V

Qg ⓘ - Total Gate Charge: 58 nC

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO-3PN

WFW9N90 substitution

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WFW9N90 datasheet

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WFW9N90

WFW9N90 WFW9N90 WFW9N90 WFW9N90 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V,R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description These N-Channel enhancement mode p... See More ⇒

 0.1. Size:532K  winsemi
 wfw9n90w.pdf pdf_icon

WFW9N90

WFW9N90W WFW9N90W WFW9N90W WFW9N90W Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 9A,900V, R (Max1.35 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This N-Channel enhancement mo... See More ⇒

Detailed specifications: WFW13N50, WFW18N50, WFW18N50N, WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W, WFW40N25W, STP65NF06, WFW9N90W, WFY3N02, WFY3P02, WFY4101, WFY5N03, WFY5P03, WFY6N02, PMCPB5530X

Keywords - WFW9N90 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.