All MOSFET. WFW9N90 Datasheet

 

WFW9N90 Datasheet and Replacement


   Type Designator: WFW9N90
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-3PN
 

 WFW9N90 substitution

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WFW9N90 Datasheet (PDF)

 ..1. Size:428K  winsemi
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WFW9N90

WFW9N90WFW9N90WFW9N90WFW9N90Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V,R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThese N-Channel enhancement mode p

 0.1. Size:532K  winsemi
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WFW9N90

WFW9N90WWFW9N90WWFW9N90WWFW9N90WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mo

Datasheet: WFW13N50 , WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , IRFZ48N , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X .

History: AO8814 | BLP02N06-P | AONS66406 | AP4439GH-HF | HM5N06R | SSM3K04FV | TK10S04K3L

Keywords - WFW9N90 MOSFET datasheet

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