All MOSFET. WFW9N90W Datasheet

 

WFW9N90W Datasheet and Replacement


   Type Designator: WFW9N90W
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm
   Package: TO-247
 

 WFW9N90W substitution

   - MOSFET ⓘ Cross-Reference Search

 

WFW9N90W Datasheet (PDF)

 ..1. Size:532K  winsemi
 wfw9n90w.pdf pdf_icon

WFW9N90W

WFW9N90WWFW9N90WWFW9N90WWFW9N90WSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V, R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis N-Channel enhancement mo

 7.1. Size:428K  winsemi
 wfw9n90.pdf pdf_icon

WFW9N90W

WFW9N90WFW9N90WFW9N90WFW9N90Silicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 9A,900V,R (Max1.35)@V =10VDS(on) GS Ultra-low Gate charge(Typical 58nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThese N-Channel enhancement mode p

Datasheet: WFW18N50 , WFW18N50N , WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , IRF1405 , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , PMCXB900UE .

History: VS4610AP | YTF540 | GP1M013A050XX | GP1M015A050XX | YTF631 | GP1M010A080XX | STW18NK80Z

Keywords - WFW9N90W MOSFET datasheet

 WFW9N90W cross reference
 WFW9N90W equivalent finder
 WFW9N90W lookup
 WFW9N90W substitution
 WFW9N90W replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets

 

 
Back to Top

 


 
.