All MOSFET. WFY3P02 Datasheet

 

WFY3P02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WFY3P02
   Marking Code: P02YM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.73 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.5 nC
   trⓘ - Rise Time: 12.6 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
   Package: SOT-23

 WFY3P02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WFY3P02 Datasheet (PDF)

 ..1. Size:225K  winsemi
 wfy3p02.pdf

WFY3P02 WFY3P02

WFY3P02WFY3P02WFY3P02WFY3P02Trench Power MOSFETTrenchPower MOSFETTrenchPower MOSFETTrench PowerMOSFET-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23Features -3.2A, -20V, RDS(on)(Max 85m)@VGS=-4.5V -1.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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