WFY3P02 Datasheet and Replacement
Type Designator: WFY3P02
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.73 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.6 nS
Cossⓘ - Output Capacitance: 100 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm
Package: SOT-23
WFY3P02 substitution
WFY3P02 Datasheet (PDF)
wfy3p02.pdf

WFY3P02WFY3P02WFY3P02WFY3P02Trench Power MOSFETTrenchPower MOSFETTrenchPower MOSFETTrench PowerMOSFET-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23-20 V, Single P-Channel, SOT-23Features -3.2A, -20V, RDS(on)(Max 85m)@VGS=-4.5V -1.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint
Datasheet: WFW18N50W , WFW20N60W , WFW24N50N , WFW24N50W , WFW40N25W , WFW9N90 , WFW9N90W , WFY3N02 , RU7088R , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , PMCPB5530X , PMCXB900UE , PMDPB28UN , PMDPB30XN .
History: OSG60R670PF | AP8N4R2MT | BUZ380 | IRFH8334PBF-1 | AP60T06GJ-HF | FQD12P10TF | ZXMN20B28K
Keywords - WFY3P02 MOSFET datasheet
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History: OSG60R670PF | AP8N4R2MT | BUZ380 | IRFH8334PBF-1 | AP60T06GJ-HF | FQD12P10TF | ZXMN20B28K



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