WFY3P02 Specs and Replacement

Type Designator: WFY3P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.73 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.6 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.085 Ohm

Package: SOT-23

WFY3P02 substitution

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WFY3P02 datasheet

 ..1. Size:225K  winsemi
 wfy3p02.pdf pdf_icon

WFY3P02

WFY3P02 WFY3P02 WFY3P02 WFY3P02 Trench Power MOSFET TrenchPower MOSFET TrenchPower MOSFET Trench PowerMOSFET -20 V, Single P-Channel, SOT-23 -20 V, Single P-Channel, SOT-23 -20 V, Single P-Channel, SOT-23 -20 V, Single P-Channel, SOT-23 Features -3.2A, -20V, RDS(on)(Max 85m )@VGS=-4.5V -1.5 V Rated for Low Voltage Gate Drive SOT-23 Surface Mount for Small Footprint ... See More ⇒

Detailed specifications: WFW18N50W, WFW20N60W, WFW24N50N, WFW24N50W, WFW40N25W, WFW9N90, WFW9N90W, WFY3N02, IRFZ48N, WFY4101, WFY5N03, WFY5P03, WFY6N02, PMCPB5530X, PMCXB900UE, PMDPB28UN, PMDPB30XN

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.