PMCPB5530X Specs and Replacement

Type Designator: PMCPB5530X

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 87 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm

Package: DFN2020-6

PMCPB5530X substitution

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PMCPB5530X datasheet

 ..1. Size:1321K  nxp
 pmcpb5530x.pdf pdf_icon

PMCPB5530X

PMCPB5530X 20 V, complementary Trench MOSFET Rev. 1 26 June 2012 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ... See More ⇒

Detailed specifications: WFW9N90, WFW9N90W, WFY3N02, WFY3P02, WFY4101, WFY5N03, WFY5P03, WFY6N02, IRFB7545, PMCXB900UE, PMDPB28UN, PMDPB30XN, PMDPB38UNE, PMDPB42UN, PMDPB55XP, PMDPB56XN, PMDPB58UPE

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.