All MOSFET. PMCPB5530X Datasheet

 

PMCPB5530X Datasheet and Replacement


   Type Designator: PMCPB5530X
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.49 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 87 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: DFN2020-6
 

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PMCPB5530X Datasheet (PDF)

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PMCPB5530X

PMCPB5530X20 V, complementary Trench MOSFETRev. 1 26 June 2012 Product data sheet1. Product profile1.1 General descriptionComplementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching

Datasheet: WFW9N90 , WFW9N90W , WFY3N02 , WFY3P02 , WFY4101 , WFY5N03 , WFY5P03 , WFY6N02 , IRFB7545 , PMCXB900UE , PMDPB28UN , PMDPB30XN , PMDPB38UNE , PMDPB42UN , PMDPB55XP , PMDPB56XN , PMDPB58UPE .

Keywords - PMCPB5530X MOSFET datasheet

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