All MOSFET. PMDXB1200UPE Datasheet

 

PMDXB1200UPE Datasheet and Replacement


   Type Designator: PMDXB1200UPE
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.285 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.41 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 5.9 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: DFN1010B-6
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PMDXB1200UPE Datasheet (PDF)

 ..1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB1200UPE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB1200UPE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB1200UPE

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.3. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB1200UPE

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

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Keywords - PMDXB1200UPE MOSFET datasheet

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