Справочник MOSFET. PMDXB1200UPE

 

PMDXB1200UPE Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: PMDXB1200UPE
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 0.285 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 0.95 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 0.41 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 0.7 nC
   trⓘ - Время нарастания: 4 ns
   Cossⓘ - Выходная емкость: 5.9 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: DFN1010B-6
     - подбор MOSFET транзистора по параметрам

 

PMDXB1200UPE Datasheet (PDF)

 ..1. Size:233K  nxp
pmdxb1200upe.pdfpdf_icon

PMDXB1200UPE

PMDXB1200UPE30 V, dual P-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.1. Size:249K  nxp
pmdxb600une.pdfpdf_icon

PMDXB1200UPE

PMDXB600UNE20 V, dual N-channel Trench MOSFET1 July 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:734K  nxp
pmdxb600unel.pdfpdf_icon

PMDXB1200UPE

PMDXB600UNEL20 V, dual N-channel Trench MOSFET28 June 2016 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.3. Size:237K  nxp
pmdxb550une.pdfpdf_icon

PMDXB1200UPE

PMDXB550UNE30 V, dual N-channel Trench MOSFET25 March 2015 Product data sheet1. General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

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History: 100N03 | STB438S | HLML6401 | AP99T03GS-HF

 

 
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