PMDXB1200UPE. Аналоги и основные параметры

Наименование производителя: PMDXB1200UPE

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.285 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 8 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.41 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 4 ns

Cossⓘ - Выходная емкость: 5.9 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm

Тип корпуса: DFN1010B-6

Аналог (замена) для PMDXB1200UPE

- подборⓘ MOSFET транзистора по параметрам

 

PMDXB1200UPE даташит

 ..1. Size:233K  nxp
 pmdxb1200upe.pdf pdf_icon

PMDXB1200UPE

PMDXB1200UPE 30 V, dual P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD pla

 9.1. Size:249K  nxp
 pmdxb600une.pdf pdf_icon

PMDXB1200UPE

PMDXB600UNE 20 V, dual N-channel Trench MOSFET 1 July 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD pla

 9.2. Size:734K  nxp
 pmdxb600unel.pdf pdf_icon

PMDXB1200UPE

PMDXB600UNEL 20 V, dual N-channel Trench MOSFET 28 June 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low leakage current Leadless ultra small and ultra thin SMD plasti

 9.3. Size:237K  nxp
 pmdxb550une.pdf pdf_icon

PMDXB1200UPE

PMDXB550UNE 30 V, dual N-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Leadless ultra small and ultra thin SMD plas

ПОКАЗАТЬ ЕЩЁ

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