All MOSFET. PMGD130UN Datasheet

 

PMGD130UN Datasheet and Replacement


   Type Designator: PMGD130UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 1.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TSSOP6
 

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PMGD130UN Datasheet (PDF)

 ..1. Size:883K  nxp
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PMGD130UN

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 9.1. Size:888K  nxp
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PMGD130UN

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications

Datasheet: PMDXB600UNE , PMDXB950UPE , PMF63UN , PMF77XN , PMF87EN , PMFPB8032XP , PMFPB8040XP , PMG45UN , IRF3710 , PMGD175XN , PMGD290UCEA , PMN22XN , PMN27XPE , PMN27XPEA , PMN40UPE , PMN40UPEA , PMN42XPE .

History: HGN046NE6A | UPA1913 | CEU4204 | SVS7N60DD2TR | 2SK2463 | KI2314EDS | P3606BEA

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