All MOSFET. PMGD130UN Datasheet

 

PMGD130UN Datasheet and Replacement


   Type Designator: PMGD130UN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.26 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 1.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
   Package: TSSOP6
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PMGD130UN Datasheet (PDF)

 ..1. Size:883K  nxp
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PMGD130UN

PMGD130UN20 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast

 9.1. Size:888K  nxp
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PMGD130UN

PMGD175XN30 V, dual N-channel Trench MOSFETRev. 1 1 June 2012 Product data sheet1. Product profile1.1 General descriptionDual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Very fast switching Trench MOSFET technology1.3 Applications

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: SMIRF18N50T8TL | NCE30P12BS | APT10021JFLL | NP180N04TUJ | SSW65R190S2 | SM4186T9RL | WMM07N65C4

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