PMN27XPEA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN27XPEA
Marking Code: BD
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.53
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25
V
|Id|ⓘ - Maximum Drain Current: 4.4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 15
nC
trⓘ - Rise Time: 22
nS
Cossⓘ -
Output Capacitance: 254
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03
Ohm
Package:
TSOP6
PMN27XPEA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN27XPEA
Datasheet (PDF)
..1. Size:275K nxp
pmn27xpea.pdf
PMN27XPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection AEC-Q101 qualified3. A
6.1. Size:199K nxp
pmn27xpe.pdf
PMN27XPE20 V, single P-channel Trench MOSFET20 September 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Fast switching Trench MOSFET technology 2 kV ESD protection1.
9.1. Size:1566K nxp
pmn27up.pdf
PMN27UP20 V, 5.7 A P-channel Trench MOSFETRev. 1 13 July 2011 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 1.8 V RDSon rated Trench MOSFET technology Very fast switch
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