All MOSFET. PMN40UPE Datasheet

 

PMN40UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMN40UPE
   Marking Code: WD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95 V
   |Id|ⓘ - Maximum Drain Current: 4.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 15.6 nC
   trⓘ - Rise Time: 21 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm
   Package: TSOP6

 PMN40UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMN40UPE Datasheet (PDF)

 ..1. Size:199K  nxp
 pmn40upe.pdf

PMN40UPE PMN40UPE

PMN40UPE20 V, single P-channel Trench MOSFET13 August 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Fast switching Trench MOSFET technology

 0.1. Size:274K  nxp
 pmn40upea.pdf

PMN40UPE PMN40UPE

PMN40UPEA20 V, single P-channel Trench MOSFET19 June 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Fast switching Trench MOSFET technology 4 kV ESD protection

 9.1. Size:722K  nxp
 pmn40ene.pdf

PMN40UPE PMN40UPE

PMN40ENE30 V, N-channel Trench MOSFET24 May 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching Enhanced power dissipatio

 9.2. Size:301K  nxp
 pmn40ena.pdf

PMN40UPE PMN40UPE

PMN40ENA60 V, N-channel Trench MOSFET11 April 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology AE

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 60N06 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

History: IXFT28N50F | PMBF4391 | IXFT32N50

 

 
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