All MOSFET. PMN50UPE Datasheet

 

PMN50UPE MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMN50UPE
   Marking Code: WH
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.51 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.9 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.5 nC
   trⓘ - Rise Time: 700 nS
   Cossⓘ - Output Capacitance: 106 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.066 Ohm
   Package: TSOP6

 PMN50UPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMN50UPE Datasheet (PDF)

 ..1. Size:225K  nxp
 pmn50upe.pdf

PMN50UPE PMN50UPE

PMN50UPE20 V, single P-channel Trench MOSFET20 July 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits 3 kV ESD protected Trench MOSFET technology Low threshold voltage1

 9.1. Size:260K  nxp
 pmn50epe.pdf

PMN50UPE PMN50UPE

PMN50EPE30 V, P-channel Trench MOSFET16 April 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Trench MOSFET technology Logic-level compatible Very fast switching ElectroStatic Discharg

 9.2. Size:127K  nxp
 pmn50xp.pdf

PMN50UPE PMN50UPE

PMN50XPP-channel TrenchMOS extremely low level FETRev. 02 2 October 2007 Product data sheet1. Product profile1.1 General descriptionExtremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.1.2 Features Low on-state

 9.3. Size:834K  cn vbsemi
 pmn50xp.pdf

PMN50UPE PMN50UPE

PMN50XPwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET- 30 5.1 nC0.054 at VGS = - 4.5 V - 4.1APPLICATIONS Load SwitchTSOP-6(4) STop V iew1 6(3) G3 mm523 4(1, 2, 5, 6) D2.85 mmP-Cha

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History: IRFR3708PBF | FDS8435A | 2SK1225 | IRLL024ZPBF | IRFR3806 | IRLML0030PBF-1 | AFN3030

 

 
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