PMN80XP MOSFET. Datasheet pdf. Equivalent
Type Designator: PMN80XP
Marking Code: WA
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.385 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
|Id|ⓘ - Maximum Drain Current: 2.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 5 nC
trⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 63 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
Package: TSOP6
PMN80XP Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMN80XP Datasheet (PDF)
..1. Size:932K nxp
pmn80xp.pdf
pmn80xp.pdf
PMN80XP20 V, single P-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits RDSon specified at 1.8 V operation Fast switching Trench MOS
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
