All MOSFET. PMN80XP Datasheet

 

PMN80XP Datasheet and Replacement


   Type Designator: PMN80XP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.385 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm
   Package: TSOP6
 

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PMN80XP Datasheet (PDF)

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PMN80XP

PMN80XP20 V, single P-channel Trench MOSFETRev. 1 8 May 2012 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits RDSon specified at 1.8 V operation Fast switching Trench MOS

Datasheet: PMN40UPE , PMN40UPEA , PMN42XPE , PMN42XPEA , PMN50UPE , PMN50XP , PMN70XPE , PMN70XPEA , IRFP260 , PMPB10XNE , PMPB11EN , PMPB12UN , PMPB13XNE , PMPB15XN , PMPB15XP , PMPB16XN , PMPB19XP .

History: SM6008NF | 2SK1813

Keywords - PMN80XP MOSFET datasheet

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