PMN80XP Specs and Replacement

Type Designator: PMN80XP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.385 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 63 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.102 Ohm

Package: TSOP6

PMN80XP substitution

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PMN80XP datasheet

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 pmn80xp.pdf pdf_icon

PMN80XP

PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits RDSon specified at 1.8 V operation Fast switching Trench MOS... See More ⇒

Detailed specifications: PMN40UPE, PMN40UPEA, PMN42XPE, PMN42XPEA, PMN50UPE, PMN50XP, PMN70XPE, PMN70XPEA, 2SK3878, PMPB10XNE, PMPB11EN, PMPB12UN, PMPB13XNE, PMPB15XN, PMPB15XP, PMPB16XN, PMPB19XP

Keywords - PMN80XP MOSFET specs

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