All MOSFET. PMPB215ENEA Datasheet

 

PMPB215ENEA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PMPB215ENEA
   Marking Code: 2B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.7 V
   |Id|ⓘ - Maximum Drain Current: 1.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4.8 nC
   trⓘ - Rise Time: 2 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.23 Ohm
   Package: DFN2020MD-6

 PMPB215ENEA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PMPB215ENEA Datasheet (PDF)

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