PMPB29XPE Specs and Replacement

Type Designator: PMPB29XPE

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 53 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0325 Ohm

Package: DFN2020MD-6

PMPB29XPE substitution

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PMPB29XPE datasheet

 ..1. Size:233K  nxp
 pmpb29xpe.pdf pdf_icon

PMPB29XPE

PMPB29XPE 20 V, single P-channel Trench MOSFET 5 December 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 2.3 kV ESD protected Small and leadless ultra... See More ⇒

 0.1. Size:278K  nxp
 pmpb29xpea.pdf pdf_icon

PMPB29XPE

PMPB29XPEA 20 V, P-channel Trench MOSFET 27 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flanks fo... See More ⇒

 7.1. Size:288K  nxp
 pmpb29xnea.pdf pdf_icon

PMPB29XPE

PMPB29XNEA 30 V, N-channel Trench MOSFET 10 September 2018 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Trench MOSFET technology Side wettable flank... See More ⇒

 7.2. Size:258K  nxp
 pmpb29xne.pdf pdf_icon

PMPB29XPE

PMPB29XNE 30 V, single N-channel Trench MOSFET 26 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits 1 kV ESD protection Small and leadless ultra thin SMD plastic pack... See More ⇒

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Detailed specifications: PMPB19XP, PMPB20EN, PMPB20UN, PMPB20XPE, PMPB215ENEA, PMPB23XNE, PMPB27EP, PMPB29XNE, 5N65, PMPB33XN, PMPB33XP, PMPB40SNA, PMPB43XPE, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA

Keywords - PMPB29XPE MOSFET specs

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