All MOSFET. PMPB85ENEA Datasheet

 

PMPB85ENEA Datasheet and Replacement


   Type Designator: PMPB85ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: DFN2020MD-6
 

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PMPB85ENEA Datasheet (PDF)

 ..1. Size:240K  nxp
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PMPB85ENEA

PMPB85ENEA60 V, single N-channel Trench MOSFET19 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti

 9.1. Size:307K  nxp
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PMPB85ENEA

PMPB8XN20 V, N-channel Trench MOSFET24 September 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology

Datasheet: PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , IRFP250 , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN .

History: IRFU3505P | BUZ357

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