PMPB85ENEA Specs and Replacement

Type Designator: PMPB85ENEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: DFN2020MD-6

PMPB85ENEA substitution

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PMPB85ENEA datasheet

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PMPB85ENEA

PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti... See More ⇒

 9.1. Size:307K  nxp
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PMPB85ENEA

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Detailed specifications: PMPB29XNE, PMPB29XPE, PMPB33XN, PMPB33XP, PMPB40SNA, PMPB43XPE, PMPB47XP, PMPB48EP, AON7506, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN

Keywords - PMPB85ENEA MOSFET specs

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