PMPB85ENEA Datasheet and Replacement
Type Designator: PMPB85ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
Package: DFN2020MD-6
PMPB85ENEA substitution
PMPB85ENEA Datasheet (PDF)
pmpb85enea.pdf

PMPB85ENEA60 V, single N-channel Trench MOSFET19 December 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package usingTrench MOSFET technology.2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plasti
pmpb8xn.pdf

PMPB8XN20 V, N-channel Trench MOSFET24 September 2019 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium powerDFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Very fast switching Low threshold voltage Trench MOSFET technology
Datasheet: PMPB29XNE , PMPB29XPE , PMPB33XN , PMPB33XP , PMPB40SNA , PMPB43XPE , PMPB47XP , PMPB48EP , 2N7002 , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , PMV130ENEA , PMV16XN , PMV20EN .
History: NCE82H140D | AP65PN2R6I | SQD97N06-6M3L
Keywords - PMPB85ENEA MOSFET datasheet
PMPB85ENEA cross reference
PMPB85ENEA equivalent finder
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PMPB85ENEA substitution
PMPB85ENEA replacement
History: NCE82H140D | AP65PN2R6I | SQD97N06-6M3L



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