PMT200EN Specs and Replacement

Type Designator: PMT200EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 35 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.235 Ohm

Package: SC-73

PMT200EN substitution

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PMT200EN datasheet

 ..1. Size:213K  nxp
 pmt200en.pdf pdf_icon

PMT200EN

PMT200EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo... See More ⇒

 7.1. Size:286K  nxp
 pmt200epe.pdf pdf_icon

PMT200EN

PMT200EPE 70 V, P-channel Trench MOSFET 14 March 2018 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D... See More ⇒

 9.1. Size:225K  prisemi
 ppmt20v4e.pdf pdf_icon

PMT200EN

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary V (V) R ( ) I (A) DS DS(on) D G 1 -20 0.037 @ V =-4.5V -4 GS S 2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20V DS Gate-Source Voltage V 10 V GS Drain Current Contin... See More ⇒

 9.2. Size:109K  prisemi
 ppmt20v3.pdf pdf_icon

PMT200EN

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D 3 MOSFET Product Summary VDS(V) RDS(on)( ) ID(A) G 1 0.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S 2 Electrical characteristics per line@25 ( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units OFF CHARACTE... See More ⇒

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Detailed specifications: PMPB40SNA, PMPB43XPE, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, AO4407, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2

Keywords - PMT200EN MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs