PMT200EN - параметры транзистора MOSFET, его аналоги, datasheet

PMT200EN Datasheet (PDF)

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pmt200en.pdf pdf_icon

PMT200EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo

7.1. Size:286K nxp
pmt200epe.pdf pdf_icon

PMT200EPE70 V, P-channel Trench MOSFET14 March 2018 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology ElectroStatic D

9.1. Size:225K prisemi
ppmt20v4e.pdf pdf_icon

PPMT20V4E P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary V (V) R () I (A) DS DS(on) DG1-20 0.037 @ V =-4.5V -4 GSS2 Absolute maximum rating@25 Rating Symbol Value Units Drain-Source Voltage V -20VDSGate-Source Voltage V 10 V GSDrain Current Contin

9.2. Size:109K prisemi
ppmt20v3.pdf pdf_icon

PPMT20V3 P-Channel MOSFET Description The enhancement mode MOS is extremely high density cell and low on-resistance. D3 MOSFET Product Summary VDS(V) RDS(on)() ID(A) G10.08 @ VGS=-4.5V -20 -2.8 0.11@ VGS=-2.5V S2 Electrical characteristics per line@25( unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. UnitsOFF CHARACTE

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