PMT760EN MOSFET. Datasheet pdf. Equivalent
Type Designator: PMT760EN
Marking Code: T760EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 2.4 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 24 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: SC-73
PMT760EN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMT760EN Datasheet (PDF)
..1. Size:211K nxp
pmt760en.pdf
pmt760en.pdf
PMT760EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo
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