PMT760EN Datasheet and Replacement
Type Designator: PMT760EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: SC-73
PMT760EN substitution
PMT760EN Datasheet (PDF)
pmt760en.pdf
PMT760EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo
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