PMT760EN Datasheet and Replacement
Type Designator: PMT760EN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: SC-73
PMT760EN substitution
PMT760EN Datasheet (PDF)
pmt760en.pdf
PMT760EN100 V N-channel Trench MOSFET25 October 2012 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223(SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo
Datasheet: PMPB43XPE , PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , CS150N03A8 , PMV130ENEA , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , PMV37EN2 .
History: BUK961R6-40E | PP2G10AS | 12N80G-TC3-T | TPCP8005-H
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History: BUK961R6-40E | PP2G10AS | 12N80G-TC3-T | TPCP8005-H
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