PMT760EN Specs and Replacement

Type Designator: PMT760EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 24 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: SC-73

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PMT760EN datasheet

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 pmt760en.pdf pdf_icon

PMT760EN

PMT760EN 100 V N-channel Trench MOSFET 25 October 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technolo... See More ⇒

Detailed specifications: PMPB43XPE, PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, BS170, PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2

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