PMV130ENEA Datasheet and Replacement
Type Designator: PMV130ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.46 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 27 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: TO-236AB
PMV130ENEA substitution
PMV130ENEA Datasheet (PDF)
pmv130enea.pdf

PMV130ENEA40 V, N-channel Trench MOSFET12 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected
Datasheet: PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , 10N65 , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , PMV37EN2 , PMV40UN2 .
History: AP6680BGM-HF | NVD4806N | MTP4N85 | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I
Keywords - PMV130ENEA MOSFET datasheet
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History: AP6680BGM-HF | NVD4806N | MTP4N85 | TPCA8008-H | CS5N65A3 | GSM6424 | NCE70N900I



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