All MOSFET. PMV130ENEA Datasheet

 

PMV130ENEA Datasheet and Replacement


   Type Designator: PMV130ENEA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 27 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO-236AB
 

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PMV130ENEA Datasheet (PDF)

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PMV130ENEA

PMV130ENEA40 V, N-channel Trench MOSFET12 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected

Datasheet: PMPB47XP , PMPB48EP , PMPB85ENEA , PMPB95ENEA , PMR290UNE , PMR670UPE , PMT200EN , PMT760EN , 2SK3568 , PMV16XN , PMV20EN , PMV20XNE , PMV250EPEA , PMV27UPE , PMV30UN2 , PMV37EN2 , PMV40UN2 .

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