PMV130ENEA Specs and Replacement

Type Designator: PMV130ENEA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.46 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 27 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm

Package: TO-236AB

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PMV130ENEA datasheet

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PMV130ENEA

PMV130ENEA 40 V, N-channel Trench MOSFET 12 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected ... See More ⇒

Detailed specifications: PMPB47XP, PMPB48EP, PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, 4N60, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2

Keywords - PMV130ENEA MOSFET specs

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