PMV20EN Specs and Replacement

Type Designator: PMV20EN

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO-236AB

PMV20EN substitution

- MOSFET ⓘ Cross-Reference Search

 

PMV20EN datasheet

 ..1. Size:308K  nxp
 pmv20en.pdf pdf_icon

PMV20EN

PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat... See More ⇒

 9.1. Size:719K  nxp
 pmv20xnea.pdf pdf_icon

PMV20EN

PMV20XNEA 20 V, N-channel Trench MOSFET 9 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar... See More ⇒

 9.2. Size:250K  nxp
 pmv20xne.pdf pdf_icon

PMV20EN

PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12... See More ⇒

 9.3. Size:332K  tysemi
 pmv20xn.pdf pdf_icon

PMV20EN

Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET t... See More ⇒

SHOW MORE

Detailed specifications: PMPB85ENEA, PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, IRF1407, PMV20XNE, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA

Keywords - PMV20EN MOSFET specs

 PMV20EN cross reference

 PMV20EN equivalent finder

 PMV20EN pdf lookup

 PMV20EN substitution

 PMV20EN replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs