PMV20EN
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV20EN
Marking Code: *KC
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.51
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2
V
|Id|ⓘ - Maximum Drain Current: 6
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 7.2
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 90
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
TO-236AB
PMV20EN
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV20EN
Datasheet (PDF)
..1. Size:308K nxp
pmv20en.pdf
PMV20EN30 V, N-channel Trench MOSFET5 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat
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pmv20xnea.pdf
PMV20XNEA20 V, N-channel Trench MOSFET9 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar
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pmv20xne.pdf
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pmv20xn.pdf
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