PMV20EN Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: PMV20EN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 0.51 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 17 ns
Cossⓘ - Выходная емкость: 90 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.021 Ohm
Тип корпуса: TO-236AB
- подбор MOSFET транзистора по параметрам
PMV20EN Datasheet (PDF)
pmv20en.pdf

PMV20EN30 V, N-channel Trench MOSFET5 June 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat
pmv20xnea.pdf

PMV20XNEA20 V, N-channel Trench MOSFET9 March 2016 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar
pmv20xne.pdf

PMV20XNE30 V, N-channel Trench MOSFET10 November 2014 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12
pmv20xn.pdf

Product specificationPMV20XN30 V, 4.8 A N-channel Trench MOSFETRev. 1 5 April 2011 Product data sheet1. Product profile1.1 General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Low threshold voltage Trench MOSFET t
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: STP15810 | SIHG47N60S | FMC11N60E | HGI110N08AL | SQJB40EP | SVF2N65MJ | 9N95
History: STP15810 | SIHG47N60S | FMC11N60E | HGI110N08AL | SQJB40EP | SVF2N65MJ | 9N95



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