PMV20XNE Specs and Replacement

Type Designator: PMV20XNE

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.51 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.023 Ohm

Package: TO-236AB

PMV20XNE substitution

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PMV20XNE datasheet

 ..1. Size:250K  nxp
pmv20xne.pdf pdf_icon

PMV20XNE

PMV20XNE 30 V, N-channel Trench MOSFET 10 November 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Enhanced power dissipation capability of 12... See More ⇒

 0.1. Size:719K  nxp
pmv20xnea.pdf pdf_icon

PMV20XNE

PMV20XNEA 20 V, N-channel Trench MOSFET 9 March 2016 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Dischar... See More ⇒

 7.1. Size:332K  tysemi
pmv20xn.pdf pdf_icon

PMV20XNE

Product specification PMV20XN 30 V, 4.8 A N-channel Trench MOSFET Rev. 1 5 April 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET t... See More ⇒

 9.1. Size:308K  nxp
pmv20en.pdf pdf_icon

PMV20XNE

PMV20EN 30 V, N-channel Trench MOSFET 5 June 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic level compatible Very fast switching Trench MOSFET technology Enhanced power dissipat... See More ⇒

Detailed specifications: PMPB95ENEA, PMR290UNE, PMR670UPE, PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN, 2SK3568, PMV250EPEA, PMV27UPE, PMV30UN2, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP

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