PMV30UN2 Specs and Replacement

Type Designator: PMV30UN2

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.49 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO-236AB

PMV30UN2 substitution

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PMV30UN2 datasheet

 ..1. Size:265K  nxp
pmv30un2.pdf pdf_icon

PMV30UN2

PMV30UN2 20 V, N-channel Trench MOSFET 24 April 2014 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Low threshold voltage Very fast switching Enhanced power dissip... See More ⇒

 7.1. Size:238K  philips
pmv30un.pdf pdf_icon

PMV30UN2

PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data M3D088 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed switches. 1.4 Qui... See More ⇒

 7.2. Size:107K  tysemi
pmv30un.pdf pdf_icon

PMV30UN2

Product specification PMV30UN TrenchMOS ultra low level FET Rev. 01 25 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. Product availability PMV30UN in SOT23. 1.2 Features Surface mount package Fast switching. 1.3 Applications Battery management High-speed swi... See More ⇒

 9.1. Size:254K  nxp
pmv30enea.pdf pdf_icon

PMV30UN2

PMV30ENEA 40 V N-channel Trench MOSFET 2 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range Tj = 175 C Trench MOSFET technology El... See More ⇒

Detailed specifications: PMT200EN, PMT760EN, PMV130ENEA, PMV16XN, PMV20EN, PMV20XNE, PMV250EPEA, PMV27UPE, RFP50N06, PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP

Keywords - PMV30UN2 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs