PMV48XPA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMV48XPA
Marking Code: *DZ
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.51
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.25
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 8.5
nC
trⓘ - Rise Time: 13
nS
Cossⓘ -
Output Capacitance: 130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
TO-236AB
PMV48XPA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMV48XPA
Datasheet (PDF)
..1. Size:249K nxp
pmv48xpa.pdf
PMV48XPA20 V, P-channel Trench MOSFET10 March 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFETtechnology.2. Features and benefits Logic-level compatible Trench MOSFET technology Very fast switching AEC-Q101 qualified
0.1. Size:282K nxp
pmv48xpa2.pdf
PMV48XPA220 V, P-channel Trench MOSFET28 April 2020 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.2. Features and benefits Low threshold voltage Extended temperature range Tj = 175 C Trench MOSFET technology V
7.1. Size:750K nxp
pmv48xp.pdf
PMV48XP20 V, 3.5 A P-channel Trench MOSFETRev. 1 21 December 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET tec
7.2. Size:262K tysemi
pmv48xp.pdf
Product specificationPMV48XP20 V, 3.5 A P-channel Trench MOSFETRev. 1 21 December 2010 Product data sheet1. Product profile1.1 General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.1.2 Features and benefits Logic-level compatible Very fast switch
7.3. Size:867K cn vbsemi
pmv48xp.pdf
PMV48XPwww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
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