PMXB120EPE Specs and Replacement
Type Designator: PMXB120EPE
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: DFN1010D-3
PMXB120EPE substitution
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PMXB120EPE datasheet
pmxb120epe.pdf
PMXB120EPE 30 V, P-channel Trench MOSFET 24 September 2013 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic ... See More ⇒
Detailed specifications: PMV37EN2, PMV40UN2, PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP, 2N60, PMXB350UPE, PMXB360ENEA, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, PMXB75UPE
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