PMXB360ENEA Datasheet and Replacement
Type Designator: PMXB360ENEA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 20 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: DFN1010D-3
PMXB360ENEA substitution
PMXB360ENEA Datasheet (PDF)
pmxb360enea.pdf

PMXB360ENEA80 V, N-channel Trench MOSFET16 September 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic p
pmxb350upe.pdf

PMXB350UPE20 V, P-channel Trench MOSFET24 January 2014 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic pa
Datasheet: PMV45EN2 , PMV48XPA , PMV50XP , PMV65XPE , PMV65XPEA , PMV75UP , PMXB120EPE , PMXB350UPE , AO3401 , PMXB40UNE , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , PMXB75UPE , PMZ1200UPE , PMZ130UNE .
History: HM3400B
Keywords - PMXB360ENEA MOSFET datasheet
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History: HM3400B



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