PMXB360ENEA Specs and Replacement
Type Designator: PMXB360ENEA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 20 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: DFN1010D-3
PMXB360ENEA substitution
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PMXB360ENEA datasheet
pmxb360enea.pdf
PMXB360ENEA 80 V, N-channel Trench MOSFET 16 September 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Leadless ultra small and ultra thin SMD plastic p... See More ⇒
pmxb350upe.pdf
PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Leadless ultra small and ultra thin SMD plastic pa... See More ⇒
Detailed specifications: PMV45EN2, PMV48XPA, PMV50XP, PMV65XPE, PMV65XPEA, PMV75UP, PMXB120EPE, PMXB350UPE, P60NF06, PMXB40UNE, PMXB43UNE, PMXB56EN, PMXB65ENE, PMXB65UPE, PMXB75UPE, PMZ1200UPE, PMZ130UNE
Keywords - PMXB360ENEA MOSFET specs
PMXB360ENEA cross reference
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PMXB360ENEA replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
