PMXB40UNE Datasheet and Replacement
Type Designator: PMXB40UNE
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 107 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: DFN1010D-3
PMXB40UNE substitution
PMXB40UNE Datasheet (PDF)
pmxb40une.pdf

PMXB40UNE12 V, N-channel Trench MOSFET27 September 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package
pmxb43une.pdf

PMXB43UNE20 V, N-channel Trench MOSFET19 September 2013 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra smallDFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using TrenchMOSFET technology.2. Features and benefits Trench MOSFET technology Leadless ultra small and thin SMD plastic package
Datasheet: PMV48XPA , PMV50XP , PMV65XPE , PMV65XPEA , PMV75UP , PMXB120EPE , PMXB350UPE , PMXB360ENEA , IRF520 , PMXB43UNE , PMXB56EN , PMXB65ENE , PMXB65UPE , PMXB75UPE , PMZ1200UPE , PMZ130UNE , PMZ200UNE .
Keywords - PMXB40UNE MOSFET datasheet
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